Electron mobility enhancement in STRAINED-Germanium NMOSFETs and impact of strain engineering in ballistic regime

CHEE-WEE LIUYang, Y.-J.Y.-J.YangChang, S.T.S.T.ChangCHEE-WEE LIU2018-09-102018-09-102007http://www.scopus.com/inward/record.url?eid=2-s2.0-34548815012&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/332390[SDGs]SDG7Electron mobility enhancement in STRAINED-Germanium NMOSFETs and impact of strain engineering in ballistic regimeconference paper10.1109/VTSA.2007.378950