1 nm equivalent oxide thickness in Ga2 O3 (Gd2 O3) In0.2 Ga0.8 As metal-oxide-semiconductor capacitors

Shiu, K.H.K.H.ShiuChiang, T.H.T.H.ChiangChang, P.P.ChangTung, L.T.L.T.TungMINGHWEI HONGKwo, J.J.KwoTsai, W.W.Tsai2019-12-272019-12-272008https://scholars.lib.ntu.edu.tw/handle/123456789/443425http://scholars.lib.ntu.edu.tw/handle/123456789/340174[SDGs]SDG71 nm equivalent oxide thickness in Ga2 O3 (Gd2 O3) In0.2 Ga0.8 As metal-oxide-semiconductor capacitorsjournal article10.1063/1.29188352-s2.0-43049083322https://www.scopus.com/inward/record.uri?eid=2-s2.0-43049083322&doi=10.1063%2f1.2918835&partnerID=40&md5=c141b75da50ace1ffff7c8f3f2ebd74d