Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y<inf>2</inf>O<inf>3</inf> on Ge

Chu, L.K.L.K.ChuLee, W.C.W.C.LeeHuang, M.L.M.L.HuangChang, Y.H.Y.H.ChangTung, L.T.L.T.TungChang, C.C.C.C.ChangLee, Y.J.Y.J.LeeKwo, J.J.KwoMINGHWEI HONG2019-12-272019-12-272009https://scholars.lib.ntu.edu.tw/handle/123456789/443405[SDGs]SDG7Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y<inf>2</inf>O<inf>3</inf> on Gejournal article10.1016/j.jcrysgro.2008.10.0692-s2.0-63349111613https://www.scopus.com/inward/record.uri?eid=2-s2.0-63349111613&doi=10.1016%2fj.jcrysgro.2008.10.069&partnerID=40&md5=1440b8d5a02f33c1b0632f68c52d8bdb