Publisher's note: "Optimization of dislocation edge stress effects for Si N-type metal-oxide-semiconductor field-effect transistors" [Jpn. J. Appl. Phys. 52, 04CC20 (2013)]

Liao, M.-H.M.-H.LiaoChen, C.-H.C.-H.ChenChang, L.-C.L.-C.ChangYang, C.C.YangYu, M.-A.M.-A.YuLiu, G.-H.G.-H.LiuKao, S.-C.S.-C.Kao2019-03-112019-03-11201500214922https://scholars.lib.ntu.edu.tw/handle/123456789/404499https://www.scopus.com/inward/record.uri?eid=2-s2.0-84924261139&doi=10.7567%2fJJAP.54.039205&partnerID=40&md5=5e381a8a7191fa3a5df5614809b186a7Publisher's note: "Optimization of dislocation edge stress effects for Si N-type metal-oxide-semiconductor field-effect transistors" [Jpn. J. Appl. Phys. 52, 04CC20 (2013)]corrigendum10.7567/JJAP.54.0392052-s2.0-84924261139