Performance and polarization effects in (11(2)over-bar2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers

YUH-RENN WU2018-09-102018-09-102012http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000309425700006&KeyUID=WOS:000309425700006http://scholars.lib.ntu.edu.tw/handle/123456789/370050[SDGs]SDG7Performance and polarization effects in (11(2)over-bar2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layersjournal article10.1063/1.4753949