Po-Ching HsuWEI-CHUNG CHENGYu-Tang TsaiYen-Cheng KungChing-Hsiang ChangCHUNG-CHIH WUHsing-Hung Hsieh2018-09-102018-09-102014-03http://scholars.lib.ntu.edu.tw/handle/123456789/388686https://www.scopus.com/inward/record.uri?eid=2-s2.0-84894433192&doi=10.1016%2fj.tsf.2013.06.059&partnerID=40&md5=fe8adb997c5c0204189bc61c3616fef0Although SnO is a promising p-type oxide material for thin-film transistors (TFTs), the development of the TFT-industry-compatible deposition technique and materials for p-type SnO films is still an issue. In this work, we demonstrate the preparation of pure and p-type SnO films using the Sn/SnO2 mixed target and the conventional magnetron sputtering technique. By controlling the sputtering conditions, the deposited films can be tuned from pure n-type SnO2 to pure p-type SnO. Compared to other sputtering target materials (e.g., pure SnO and Sn), the Sn/SnO2 mixed targets can be fabricated by the high-temperature high-pressure pressing/sintering technique and have higher density and robustness more suitable for real uses. The p-type mobility of SnO films obtained here is comparable to results of other approaches, showing the feasibility of this method. © 2013 Elsevier B.V.Oxides; p-type; RF sputtering; Sputtering target; Tin monoxidejournal article10.1016/j.tsf.2013.06.0592-s2.0-84894433192WOS:000331546400013