Biring, S.S.BiringSung, Y.-M.Y.-M.SungNguyen, T.P.T.P.NguyenLi, Y.-Z.Y.-Z.LiLee, C.-C.C.-C.LeeYi Chan, A.H.A.H.Yi ChanPal, B.B.PalSen, S.S.SenLiu, S.-W.S.-W.LiuWong, K.-T.K.-T.Wong2019-07-312019-07-312019https://www.scopus.com/inward/record.uri?eid=2-s2.0-85067809082&doi=10.1016%2fj.orgel.2019.06.014&partnerID=40&md5=1443ccbb42dd15e78ea9ffcfaadd9c58https://scholars.lib.ntu.edu.tw/handle/123456789/415799Open circuit voltage of a photovoltaic system, in general, is constrained by the Schottky barrier (SB) heights formed at the electrodes. Here, the SB heights which are inhomogeneous in nature at the anode-semiconductor junction of a donor-acceptor-acceptor molecule, 2-[(7-(4-[N,N-bis(4-methylphenyl)amino]phenyl)-2,1,3-benzothia-diazol-4-yl)methylene] propane-dinitrile (DTDCPB), mixed with C70 as a bulk heterojunction have been studied thoroughly by inserting an insulating layer of MoO3 with different thicknesses (6 nm, 12 nm, 18 nm) and measuring the current density-voltage (J-V) and capacitance-voltage (C–V) characteristics of the photovoltaics under a large temperature range of 100K–300 K for proper estimation of open circuit voltage (Voc). Experimental results reveal a linear inverse temperature dependence of SB heights in the whole temperature range. The mismatch in the extracted values of SB heights from the independent measurements of J-V and C–V vanishes under the consideration of non-linear temperature dependence of built-in potential (Vbi) leading to the legitimate prediction of Voc. © 2019 Elsevier B.V.CV; DTDCPB:C70; Inhomogeneous Schottky barriers; J-V; Low temperature; Open circuit voltage[SDGs]SDG7Capacitance; Electrodes; Heterojunctions; Molybdenum oxide; Photovoltaic cells; Schottky barrier diodes; Temperature distribution; Timing circuits; Bulk heterojunction; DTDCPB:C70; Independent measurement; Inverse temperatures; Low temperatures; Organic photovoltaics; Photovoltaic systems; Schottky barriers; Open circuit voltagejournal article10.1016/j.orgel.2019.06.0142-s2.0-85067809082