Rahaman, S.Z.S.Z.RahamanSu, Y.-H.Y.-H.SuChen, G.-L.G.-L.ChenChen, F.-M.F.-M.ChenWei, J.-H.J.-H.WeiHou, T.-H.T.-H.HouSheu, S.-S.S.-S.SheuCHIH-I WUDeng, D.-L.D.-L.DengWang, I.-J.I.-J.WangWang, D.-Y.D.-Y.WangCHI-FENG PAIHsin, Y.-C.Y.-C.HsinYang, S.-Y.S.-Y.YangLee, H.-H.H.-H.LeeChang, Y.-J.Y.-J.Chang2021-02-042021-02-04202021686734https://www.scopus.com/inward/record.url?eid=2-s2.0-85080135665&partnerID=40&md5=1a227781068651b79b35aa5aa9c3648dhttps://scholars.lib.ntu.edu.tw/handle/123456789/546648We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process. The proposed SOT-MRAM process technology resolves etching non-uniformity and reduction of high resistivity heavy-metal nanowire resistance issues. Besides, we present device size-dependent switching current threshold in the proposed SOT-MRAM cell structure. To realize the potential of our fabricated SOT-MRAM, wafer-level uniformity, cycling and temperature dependence SOT switching have been comprehensively investigated. Furthermore, the thermal stability factor ( ${\Delta }$ ) was calculated from temperature-dependence SOT switching to fulfill the thermal stability criteria, i.e., > 10 years of this emerging SOT-MRAM technology. © 2013 IEEE.magnetic tunnel junction; spin-hall effect; spin-orbit torque; spin-transfer torque; Spintronics[SDGs]SDG7[SDGs]SDG9Etching; Heavy metals; Magnetic recording; Manufacture; MRAM devices; Random access storage; Spin Hall effect; Spintronics; Stability criteria; Switching; Temperature distribution; Thermodynamic stability; Torque; Tunnel junctions; Etching non-uniformity; Magnetic random access memory; Magnetic tunnel junction; Process Technologies; Spin orbits; Spin transfer torque; Switching properties; Temperature dependence; Magnetic storagejournal article10.1109/JEDS.2020.29718922-s2.0-85080135665WOS:000526721100002