Kinetic mechanism of V-shaped twinning in 3C/4H-SiC heteroepitaxy

Xin, B.B.XinZhang, Y.-M.Y.-M.ZhangWu, H.-M.H.-M.WuFeng, Z.C.Z.C.FengLin, H.-H.H.-H.LinJia, R.-X.R.-X.JiaHAO-HSIUNG LIN2020-06-112020-06-112016https://scholars.lib.ntu.edu.tw/handle/123456789/500456Kinetic mechanism of V-shaped twinning in 3C/4H-SiC heteroepitaxyjournal article10.1116/1.49476012-s2.0-84969697691https://www.scopus.com/inward/record.uri?eid=2-s2.0-84969697691&doi=10.1116%2f1.4947601&partnerID=40&md5=9a604f0b1bbbcd67b476a3d711d7b370