JENN-GWO HWU2018-09-102018-09-102015https://www.scopus.com/inward/record.uri?eid=2-s2.0-84946089301&doi=10.1149%2f06905.0261ecst&partnerID=40&md5=30637a0cbf4f1ef4987f4566f1bb1d8dhttp://scholars.lib.ntu.edu.tw/handle/123456789/391183The photo-induced negative capacitance (NC) phenomenon in MOS(n) is firstly observed and investigated by both experiments and simulations. The possible mechanism for NC phenomenon is proposed. It is shown that NC is resulted from non-uniform hole-electron recombination process due to lateral diffusion of photo-induced holes. The insufficiency of bulk holes for hole-electron recombination leads to voltage-current lag and NC behavior. © The Electrochemical Society.Nanoelectronics; Hole current; Hole-electron recombination; Lateral diffusion; Negative capacitance; Non-uniform; Photo-induced; Possible mechanisms; Voltage current; Capacitanceconference paper10.1149/06905.0261ecst2-s2.0-84946089301