Su Z.-CCHING-FUH LIN2022-04-252022-04-2520210277786Xhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85113884866&doi=10.1117%2f12.2594066&partnerID=40&md5=50121e7cd6275f3ebff962c41fcfe849https://scholars.lib.ntu.edu.tw/handle/123456789/607036The Cr/n-Si Schottky interface can effectively extend the cutoff wavelength of the silicon-based device. The estimated barrier height, ideality factor, and series resistance are obtained by characteristic curves and thermionic-emission formula. In order to improve the accuracy of the estimation, a method of adjusting the external resistance in the experimental setup was proposed in this paper. Eventually, the Cr/n-Si Schottky device was well analyzed with an estimated error of < 0.05 in the resistance value, and the results also confirmed that the detection wavelength of the silicon-based components could be extended to mid-infrared range. ? 2021 SPIE. All rights reserved.Metal-semiconductorNear-infrared rangePhotodiodeSilicon based photodetectorSilicon photonicElectric resistanceInfrared detectorsSchottky barrier diodesSiliconThermionic emissionCharacteristic curveCutoff wavelengthsDetection wavelengthsExternal resistanceSchottky barrier heightsSeries resistancesSilicon-based devicesThermionic emission theoryInfrared devicesconference paper10.1117/12.25940662-s2.0-85113884866