Performance enhancement of silicon nanowire memory by tunnel oxynitride, stacked charge trap layer, and mechanical strain

Huang, C.J.C.J.HuangYang, C.H.C.H.YangHsueh, C.Y.C.Y.HsuehLee, J.H.J.H.LeeChang, Y.T.Y.T.ChangSI-CHEN LEE2020-06-112020-06-112012https://scholars.lib.ntu.edu.tw/handle/123456789/498841Performance enhancement of silicon nanowire memory by tunnel oxynitride, stacked charge trap layer, and mechanical strainjournal article10.1109/LED.2011.21737892-s2.0-84655167743https://www.scopus.com/inward/record.uri?eid=2-s2.0-84655167743&doi=10.1109%2fLED.2011.2173789&partnerID=40&md5=3f00cdc1b4efdf8579baca60b91b54fd