2 /spl mu/m emission from Si/Ge heterojunction LED and up to 1.55 /spl mu/m detection by GOI detectors with strain-enhanced features

Dept. of Electr. Eng., National Taiwan Univ.Liao, M.H.M.H.LiaoYu, C.Y.C.Y.YuHuang, C.F.C.F.HuangLin, C.H.C.H.LinLee, C.J.C.J.LeeYu, M.H.M.H.YuChang, S.T.S.T.ChangLiang, C.Y.C.Y.LiangLee, C.Y.C.Y.LeeGuo, T.H.T.H.GuoChang, C.C.C.C.ChangLiu, C.W.C.W.Liu2007-04-192018-07-062007-04-192018-07-062005-12http://ntur.lib.ntu.edu.tw//handle/246246/200704191001122application/pdf770214 bytesapplication/pdfen-US2 /spl mu/m emission from Si/Ge heterojunction LED and up to 1.55 /spl mu/m detection by GOI detectors with strain-enhanced featuresjournal article10.1109/IEDM.2005.1609532http://ntur.lib.ntu.edu.tw/bitstream/246246/200704191001122/1/01609532.pdf