Improvement of GaN epitaxial layer and AlGaN/GaN HEMTs by patterned sapphire substrate technology

Lee C.-CLee H.-JChan C.-TCHIEH-HSIUNG KUAN2022-04-252022-04-252021https://www.scopus.com/inward/record.uri?eid=2-s2.0-85119420682&partnerID=40&md5=bd617863b85f273bfb4f44955bd2e0f2https://scholars.lib.ntu.edu.tw/handle/123456789/606990A microstructure was designed to reduce the dislocations in the epitaxial GaN layer and improve electrical characteristics of HEMTs by using the patterned sapphire substrates technology. AlGaN/GaN HEMTs with the maximum drain current density increased from 308 mA/mm to 469 mA/mm were achieved. ? OSA 2021, ? 2021 The Author(s)Aluminum gallium nitrideDrain currentEpitaxial growthIII-V semiconductorsSapphireSubstratesAlGaN/GaN HEMTsAlGaN/GaN-HEMTDrain current densityElectrical characteristicGaN epitaxial layersGaN layersMaximum drain currentPatterned sapphire substrateSubstrate technologyGallium nitrideImprovement of GaN epitaxial layer and AlGaN/GaN HEMTs by patterned sapphire substrate technologyconference paper2-s2.0-85119420682