Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect- transistors using molecular beam deposited Al<inf>2</inf>O<inf>3</inf>as a gate dielectric on different reconstructed surfaces

Chang, Y.C.Y.C.ChangChang, W.H.W.H.ChangMerckling, C.C.MercklingKwo, J.J.KwoMINGHWEI HONG2019-12-272019-12-272013https://scholars.lib.ntu.edu.tw/handle/123456789/443340Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect- transistors using molecular beam deposited Al<inf>2</inf>O<inf>3</inf>as a gate dielectric on different reconstructed surfacesjournal article10.1063/1.47934332-s2.0-84875129449https://www.scopus.com/inward/record.uri?eid=2-s2.0-84875129449&doi=10.1063%2f1.4793433&partnerID=40&md5=935282cf76ea74dae2162b88ee82c071