A comprehensive study of Ge<inf>1-x</inf>Si<inf>x</inf> on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage

CHEE-WEE LIU2018-09-102018-09-102009http://www.scopus.com/inward/record.url?eid=2-s2.0-77952330177&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/350495A comprehensive study of Ge<inf>1-x</inf>Si<inf>x</inf> on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakageconference paper10.1109/IEDM.2009.5424246