Stable single-mode 850 nm VCSELs with a higher-order mode absorber formed by shallow Zn diffusion

Dept. of Electr. Eng., National Taiwan Univ.Chen, C.C.C.C.ChenLiaw, S.J.S.J.LiawYang, Y.J.Y.J.Yang2007-04-192018-07-062007-04-192018-07-062001-07http://ntur.lib.ntu.edu.tw//handle/246246/2007041910021362application/pdf91298 bytesapplication/pdfen-USStable single-mode 850 nm VCSELs with a higher-order mode absorber formed by shallow Zn diffusionjournal article10.1109/CLEOPR.2001.971096http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910021362/1/00971096.pdf