T. T. ChenW. S. SuP. W. LiuHAO-HSIUNG LINYANG-FANG CHEN2018-09-102018-09-102004-06https://www.scopus.com/inward/record.uri?eid=2-s2.0-4944223749&doi=10.1063%2f1.1787613&partnerID=40&md5=e11aa954f17dec8b737d9531164d2198The optoelectronic properties of undoped type-II GaAs0.7Sb 0.3/GaAs (100) multiple quantum wells were investigated using photoluminescence and photoconductivity measurements. It was observed that the origin of the persistent photoconductivity (PPC) effect arises from the spatial separation of photoexcited electrons and holes. It was also observed that the photoexcited carriers involved in the PPC effect were related to the valence-band to conduction-band transition. It was found that the decay rate of the PPC increases gradually with increasing temperature.[SDGs]SDG7Activation energy; Detectors; Energy gap; Interfaces (materials); Light emitting diodes; Mathematical models; Molecular beam epitaxy; Optical fibers; Photoconductivity; Photons; Quenching; Semiconducting gallium compounds; X ray diffraction analysis; Decay exponents; Energy barriers; Monochromatic radiation; Photoexcited electrons; Semiconductor quantum wellsjournal article10.1063/1.17876132-s2.0-4944223749WOS:000223555000026