2010-08-012024-05-18https://scholars.lib.ntu.edu.tw/handle/123456789/709521摘要：本計畫的目的在於研究與發展由寬能隙金屬氧化物半導體所構成之透明p-n / p-i-n接面，並進一步探討與提升其紫外光頻段之光伏特性。在這為期二年的計畫中，第一年(目前正在執行)我們以開發p型透明金屬氧化物半導體(以氧化銅鋁類別的材料為主)為目標，針對其結構、電性(電洞傳導特性)、光學性質與製程條件間的相關性進行分析，並進行基礎能帶研究，涵蓋能帶以及能帶間隙中的缺陷分佈等；第二年則將此p型透明金屬氧化物半導體與n型透明金屬氧化物半導體(以氧化鋅類別的材料為主)結合，進行透明p-n / p-i-n接面的製作與研究，並針對能帶間隙中的缺陷分佈與p-n / p-i-n接面光電特性的相關性進行系統性的研究。最後將此p-n / p-i-n 接面製程轉移至塑膠基板，完成可撓性透明p-n / p-i-n紫外光感測元件。在薄膜的開發上採用低溫磁控濺鍍法，搭配拉曼光譜、X光繞射與二次電子質譜儀等方法進行結構與成份分析，利用低溫霍爾量測與光激電流等方法檢測電性與&#36733;子傳導特性，在光學性質上則是進行穿透/反射/吸收光譜的檢定。至於在能帶研究上，將採用光電子譜搭配光或電激發螢光光譜與熱激發電流量測等方法來獲取透明金屬氧化物半導體能帶與能帶間隙中缺陷分佈。目前我們已經成功的利用鈣&#25530;雜使室溫下沉積之p-型氧化銅鋁薄膜的導電率顯著提升三個數量級，以150~200nm厚之薄膜為例，已達~1.2×10-2 S/cm的導電率以及60%以上的可見光平均穿透率。在接下來這一計畫年度我們將完成透明p-n / p-i-n異質接面的製作與最佳化，透過紫外光頻譜波段下電流-電壓特性曲線的量測等來獲取其光感測與光伏特性，並進一步將此元件轉移至軟性塑膠基板上，研究機械應力應變對此可撓性透明p-n / p-i-n紫外光感測元件的影響。<br> Abstract: The goal of this project is to develop and to have a fundamental understanding of transparent p-n / p-i-n junction based on metal oxide semiconductors and then extend their application to flexible ultraviolet sensors. Currently we are in the first-half of this two-year research project. We focus on developing p-type transparent post-transition metal oxide semiconductors (primarily on CuAlO2-based materials), investigating their structural, electrical and optical properties, and studying their electronic bandgap structures (including band-to-band and subbandgap structures). The thin films are prepared by RF reactive magnetron sputtering at room-temperature. Their structural and composition analyses are primarily done by Raman spectroscopy, X-ray diffraction, and secondary ion mass spectroscopy. Hall measurement, seekbeck measurement, dark electrical conductivity measurement, and photocurrent measurement are performed to obtain electrical characteristics of these thin films. Their electronic band structures are evaluated by transmission / reflection / absorption spectra, photoemission and inverse photoemission spectroscopy, electro- and photo-luminescence, and thermal stimulated current measurement. Our preliminary result shows that with the addition of small amount of Ca as dopants, the electrical conductivities of the room-temperature deposited Cu-Al-O p-type transparent conducting thin films are improved by three orders of magnitude. At present the as-deposited Cu-Al-O:Ca thin films have shown electrical conductivities up to ~1.2×10-2 S/cm and averaged visible transmittances of >60% (for 150~200nm thick films). In the following year of this project, we will move onto integrate the p-type Cu-Al-O:Ca thin films with n-type oxide semiconductors (mainly ZnO-based materials) to form transparent p-n / p-i-n junctions. Their current-voltage characteristics and rectifying responses will be evaluated, followed by the measurement of their photo-responsivities under UV luminance at various intensities. These results will further be correlated with the structural, optical, electronic transport properties and the electronic band structures of the junction layers, and fed back to optimize the junction layers and device structures. Once the on-glass p-n / p-i-n junction is optimized, the entire process will be moved onto plastic substrates to realize flexible transparent p-n / p-i-n junction for ultraviolet sensing. At last, the performance of these devices under mechanical deformation will be studied.透明p-n / p-i-n接面P 型透明&#63754屬氧化物半導體光電&#63946&#63870測紫外光感測transparent p-n / p-i-n junctionp-type transparent metal-oxide semiconductorphotocurrent measurementultraviolet sensing