InSb p-channel metal-oxide-semiconductor field-effect transistor prepared by photoenhanced chemical vapor deposition

Liu, B.-D.B.-D.LiuLee, S.-C.S.-C.LeeLiu, K.-C.K.-C.LiuSun, T.-P.T.-P.SunYang, S.-J.S.-J.YangSI-CHEN LEE2020-06-112020-06-111993https://scholars.lib.ntu.edu.tw/handle/123456789/498746InSb p-channel metal-oxide-semiconductor field-effect transistor prepared by photoenhanced chemical vapor depositionjournal article10.1063/1.1100682-s2.0-20844458558https://www.scopus.com/inward/record.uri?eid=2-s2.0-20844458558&doi=10.1063%2f1.110068&partnerID=40&md5=f4bf614fd56d6d03b264cf3b86348f3b