Lin, Y.-S.Y.-S.LinMa, K.-J.K.-J.MaChung, Y.-Y.Y.-Y.ChungCHIH-WEN LIUFeng, S.-W.S.-W.FengCheng, Y.-C.Y.-C.ChengCHIH-CHUNG YANGKuo, C.-T.C.-T.KuoTsang, J.-S.J.-S.Tsang2018-09-102018-09-102002http://www.scopus.com/inward/record.url?eid=2-s2.0-0036442537&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/297183It is shown that post-growth thermal annealing of such a sample with temperature ranging from 800 to 900°C led to a better confinement of indium rich clusters near InGaN quantum well layers. Transmission electron microscopy (TEM) and energy filter TEM results manifested that the sizes of indium-rich QDs were reduced with increasing annealing temperature. Also, the size homogeneity was improved. Quasi-regular arrays of indium-rich QDs embedded in InGaN quantum wells were observed in the sample of 900°C annealing. X-ray diffraction also showed the enhancement of InN relative intensity. Photoluminescence measurements revealed blue shifts of photon emission spectral peak, indicating stronger quantum confinement after thermal annealing.InGaN/GaN quantum wells; Quantum dots; Thermal annealing; Transmission electron microscopy[SDGs]SDG7Annealing; Gallium nitride; High temperature effects; Optical variables measurement; Photoluminescence; Photons; Semiconducting indium compounds; Semiconductor quantum wells; Transmission electron microscopy; X ray diffraction; Indium gallium nitride; Photoluminescence measurement; Thermal annealing; Semiconductor quantum dotsconference paper10.1117/12.4822122-s2.0-0036442537