Rajendran, VeeramaniVeeramaniRajendranChang, Chih YuChih YuChangHuang, Ming HsuanMing HsuanHuangChen, Kuan ChunKuan ChunChenHuang, Wen TseWen TseHuangKamiński, MikołajMikołajKamińskiLesniewski, TadeuszTadeuszLesniewskiMahlik, SebastianSebastianMahlikLeniec, GrzegorzGrzegorzLeniecLu, Kuang MaoKuang MaoLuWei, Da HuaDa HuaWeiChang, HoHoChangRU-SHI LIU2024-01-152024-01-152023-01-012195-1071https://scholars.lib.ntu.edu.tw/handle/123456789/638480In modern technology devices, an energy-saving miniature near-infrared (NIR) light source plays a critical role in non-destructive, non-invasive sensing applications and further advancement of technology. This paper reports the broadband NIR luminescence of Cr3+ clusters for designing phosphor-converted NIR light-emitting diodes as an alternative to typical isolated Cr3+ centers and Cr3+ ion pairs. Here, Cr3+ clusters form in the intermediate spinel structure of MgGa2O4 by utilizing the long-chain edge-shared octahedral dimers with the shortest bond distance between Cr3+ cations. Electron paramagnetic and magnetometry measurements confirm the isolated Cr3+ and Cr3+ clusters, resulting in NIR luminescence with three distinct emission centers. The formation of Cr3+ clusters in MgGa2O4 ensures stable internal quantum efficiency (≈94%), full-width-half-maximum (248 nm), thermal stability (87%), and a radiant flux of ≈17.66 mW. This work offers a promising approach to NIR phosphor design and enhances the understanding of luminescence mechanisms in spinel and related structures.enbroadband | Cr cluster 3+ | Cr ion pair 3+ | intermediate spinel structure | near-infrared phosphors | phosphor-converted light-emitting diodejournal article10.1002/adom.2023026452-s2.0-85179956127https://api.elsevier.com/content/abstract/scopus_id/85179956127