Lee PChen YWu PTUNG-HAN CHUANG2022-11-162022-11-16202221563950https://www.scopus.com/inward/record.uri?eid=2-s2.0-85130773047&doi=10.1109%2fTCPMT.2022.3177736&partnerID=40&md5=098132aed33c3516702ce3b66680737ehttps://scholars.lib.ntu.edu.tw/handle/123456789/625193GaAs has shown the potential for its wide range of applications in radio frequency integrated circuit (RF-IC) packaging due to its unique properties over the traditional Si wafers. We reported the fabrication of high-density Ag nanotwinned films deposited on (400)-oriented GaAs substrates by magnetron sputtering and electron beam evaporation. In contrast to Si, the Ti pre-coating on GaAs is no longer necessary to provide better adhesion of the Ag nanotwinned film on the substrates. The results indicate that the both the sputtered and evaporated Ag thin films exhibit high-density columnar Ag grains vertically grew on the substrates with the CSL-Σ3 twin boundaries fraction of 35.6%. The EBSD analysis reveals that the twin boundaries within the sputtered Ag columns consist of a strongly preferential orientation of (111). The successful fabrication of Ag nanotwinned film via evaporation deposition will allow the applications in the backside metallization industry to be practical. IEEEAdhesives; Ag nanotwin; evaporating; Films; GaAs; Gallium arsenide; Lattices; Silicon; Sputtering; sputtering; SubstratesChip scale packages; Evaporation; Gallium arsenide; III-V semiconductors; Integrated circuits; Semiconducting gallium; Semiconducting gallium arsenide; Silicon wafers; Sputtering; Thin films; Ag nanotwin; Compound semiconductors; Evaporating; Integrated-circuit packaging; Lattice; Nanotwinned; Nanotwins; Radio frequency integrated circuits; Semi-conductor wafer; Twin boundaries; Substratesjournal article10.1109/TCPMT.2022.31777362-s2.0-85130773047