Dept. of Electr. Eng., National Taiwan Univ.Chen, S.S.S.S.ChenKuoJB2007-04-192018-07-062007-04-192018-07-061993-11N/Ahttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0027699037&doi=10.1049%2fel%3a19931438&partnerID=40&md5=d03c6ab93c6972cede349315e99711afAn analytical capacitance model for a-Si:H thin film transistors, that considers deep and tail states simultaneously, is presented. Using an effective temperature approach and a charge-oriented concept, the localised deep and tail states have been considered in the capacitance model. As verified by the published data, this analytical capacitance model provides an accurate prediction of the C-V characteristics of an a-Si:H thin film transistor. © 1993, The Institution of Electrical Engineers. All rights reserved.application/pdf180840 bytesapplication/pdfen-USAmorphous semiconductors; Silicon; Thin film transistors[SDGs]SDG7journal article10.1049/el:199314382-s2.0-0027699037http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910042631/1/00247628.pdf