Lateral nonuniformity of the tunneling current of Al/SiO2/p-Si capacitor in inversion region due to edge fringing field effect

Lu, H.-W.H.-W.LuHwu, J.-G.J.-G.HwuJENN-GWO HWU2018-09-102018-09-102013http://www.scopus.com/inward/record.url?eid=2-s2.0-84904885163&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/378072Lateral nonuniformity of the tunneling current of Al/SiO2/p-Si capacitor in inversion region due to edge fringing field effectconference paper10.1149/05807.0339ecst