Effect of border traps on the threshold voltage instability of fluoride-doped AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Chang, L.-C.L.-C.ChangYin, S.-Y.S.-Y.YinCHAO-HSIN WU2020-06-292020-06-292019https://scholars.lib.ntu.edu.tw/handle/123456789/505921[SDGs]SDG7Effect of border traps on the threshold voltage instability of fluoride-doped AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistorsjournal article10.1088/1361-6463/ab053d2-s2.0-85063951075https://www.scopus.com/inward/record.uri?eid=2-s2.0-85063951075&doi=10.1088%2f1361-6463%2fab053d&partnerID=40&md5=37686c846314326f8e6ff2ecf3b6ddcb