A Low Noise 0.18-m Standard-CMOS-Based Silicon Avalanche Photodiode with a T-shaped Polysilicon Grating

Lee K.-YChang Y.-JChen J.-H.JAU-HORNG CHEN2021-08-052021-08-052020https://www.scopus.com/inward/record.uri?eid=2-s2.0-85098741264&doi=10.1109%2fOECC48412.2020.9273624&partnerID=40&md5=00c5e238ef332d41fb4537cc0b1a2ddfhttps://scholars.lib.ntu.edu.tw/handle/123456789/576837A 0.18-m CMOS silicon avalanche photodiode with a polysilicon grating is presented. The unamplified responsivity is 29.89% higher than that without the grating. The structure-enabled doping profile results in a dark current of 1 pA. ? 2020 IEEE.Avalanche photodiodes; Dark currents; Polysilicon; 0.18-m CMOS; Doping profiles; Low noise; Responsivity; Silicon avalanche photodiode; Standard CMOS; CMOS integrated circuitsA Low Noise 0.18-m Standard-CMOS-Based Silicon Avalanche Photodiode with a T-shaped Polysilicon Gratingconference paper10.1109/OECC48412.2020.92736242-s2.0-85098741264