Enhancement in the efficiency of light emission from silicon by a thin Al2 O3 surface-passivating layer grown by atomic layer deposition at low temperature

Chen, M.J.M.J.ChenShih, Y.T.Y.T.ShihWu, M.K.M.K.WuFENG-YU TSAIMIIN-JANG CHEN2020-05-122020-05-122007https://scholars.lib.ntu.edu.tw/handle/123456789/491247Enhancement in the efficiency of light emission from silicon by a thin Al2 O3 surface-passivating layer grown by atomic layer deposition at low temperaturejournal article10.1063/1.24641902-s2.0-33847095026https://www.scopus.com/inward/record.uri?eid=2-s2.0-33847095026&doi=10.1063%2f1.2464190&partnerID=40&md5=e72ce9aa7837974a64b4d3b5ee03822e