Pandey, GauravGauravPandeyFu, Wei-EnWei-EnFuLiu, Chun-YuChun-YuLiuHo, Chao-ChingChao-ChingHoLIANG-CHIA CHENSendelbach, Matthew J.Schuch, Nivea G.2025-07-072025-07-072025-02-24https://www.scopus.com/record/display.uri?eid=2-s2.0-105007134992&origin=resultslisthttps://scholars.lib.ntu.edu.tw/handle/123456789/730605This article reviews non-destructive X-ray metrology for next-generation semiconductor devices, focusing on Front-End-of-Line (FEOL) processes. As IMEC highlights, the transition to Gate-All-Around (GAA) architectures demands precise, buried-depth metrology for HAR (High-Aspect-Ratio) 3D structures. Advanced architectures like nanosheets, forksheets, and complementary field-effect transistors (CFET) push current measurement techniques to their limits, requiring atomic-level accuracy in critical dimension (CD) measurements. Given the limitations of conventional metrology, this article explores emerging X-ray-based techniques, their development, and future potential.Front End of Line (FEOL)Gate-All Around (GAA)SAXS (Small Angle X-ray Scattering)X-ray reflectometryX-ray scatterometryconference paper10.1117/12.3051692