Achieving high-performance Ge MOS devices using high-庥 gate dielectrics Ga2O3(Gd2O3) of sub-nm EOT

Chu, L.K.L.K.ChuChu, R.L.R.L.ChuLin, C.A.C.A.LinLin, T.D.T.D.LinChiang, T.H.T.H.ChiangKwo, J.J.KwoMINGHWEI HONG2019-12-272019-12-272010https://scholars.lib.ntu.edu.tw/handle/123456789/443381Achieving high-performance Ge MOS devices using high-庥 gate dielectrics Ga2O3(Gd2O3) of sub-nm EOTconference paper10.1109/DRC.2010.55519612-s2.0-77957606266https://www.scopus.com/inward/record.uri?eid=2-s2.0-77957606266&doi=10.1109%2fDRC.2010.5551961&partnerID=40&md5=9e8533e3850cbe2937d12da440c71d3f