Low voltage operation of non-volatile flexible OFET memory devices using high-k P(VDF-TrFE) gate dielectric and polyimide charge storage layer

Lu, M.-S.M.-S.LuWu, H.-C.H.-C.WuLin, Y.-W.Y.-W.LinUeda, M.M.UedaWEN-CHANG CHEN2019-05-092019-05-092016https://scholars.lib.ntu.edu.tw/handle/123456789/407131[SDGs]SDG7Low voltage operation of non-volatile flexible OFET memory devices using high-k P(VDF-TrFE) gate dielectric and polyimide charge storage layerjournal article10.1016/j.reactfunctpolym.2016.04.0012-s2.0-84963942488