Characterization of the electrostatic discharge induced interface traps in metal-oxide-semiconductor field-effect transistors

Tseng, J.-C.J.-C.TsengHwu, J.-G.J.-G.HwuJENN-GWO HWU2018-09-102018-09-102009http://www.scopus.com/inward/record.url?eid=2-s2.0-70449106995&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/347701[SDGs]SDG7Characterization of the electrostatic discharge induced interface traps in metal-oxide-semiconductor field-effect transistorsconference paper10.1109/IRPS.2009.5173348