Dept. of Electr. Eng., National Taiwan Univ.Samoska, L.L.SamoskaGaier, T.T.GaierPeralta, A.A.PeraltaLiao, H.H.H.H.LiaoChen, Y.C.Y.C.ChenNishimoto, M.M.NishimotoHUEI WANG2007-04-192018-07-062007-04-192018-07-062000-06https://www.scopus.com/inward/record.uri?eid=2-s2.0-0034831707&doi=10.1109%2f22.899956&partnerID=40&md5=daf8655e974638a80f2e64a80ada7bbfA set of W-band power amplifier (PA) modules using monolithic microwave integrated circuits (MMICs) have been developed for the local oscillators of the far-infrared and sub-millimeter telescope (FIRST). The MMIC PA chips include three driver and three PAs, designed using microstrip lines, and another two smaller driver amplifiers using coplanar waveguides, covering the entire W-band. The highest frequency PA, which covers 100-113 GHz, has a peak power of greater than 250 mW (25 dBm) at 105 GHz, which is the best output power performance for a monolithic amplifier above 100 GHz to date. These monolithic PA chips are fabricated using 0.1-μm AlGaAs/InGaAs/GaAs pseudomorphic T-gate power high electron-mobility transistors on a 2-mil GaAs substrate. The module assembly and testing, together with the system applications, will also be addressed in this paper. Index Terms-GaAs, HEMT, millimeter wave, MMIC, power-amplifier module. © 2001 IEEE.application/pdf363020 bytesapplication/pdfen-USHigh electron mobility transistors; Microprocessor chips; Microstrip lines; Millimeter wave devices; Monolithic microwave integrated circuits; Oscillators (electronic); Semiconducting aluminum compounds; Semiconducting indium gallium arsenide; Waveguides; Aluminum gallium arsenide; Power amplifiersjournal article10.1109/RFIC.2000.8544122-s2.0-0034831707http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910021520/1/00854412.pdf