Lin, C.M.C.M.LinWang, W.S.W.S.WangJENN-GWO HWU2018-09-102018-09-101986https://www.scopus.com/inward/record.uri?eid=2-s2.0-0022775209&doi=10.1016%2f0040-6090%2886%2990003-9&partnerID=40&md5=b7982ec1cfce83492d34b98885cea81cA new charge-temperature technique is proposed which permits control of the motion of mobile charges inside the gate oxide of metal/oxide/semiconductor field effect transistors (MOSFETs). It was shown that the transconductance of an n-channel MOSFET was increased (decreased) after the device was subjected to a negative (positive) charge-temperature treatment. A constant interface trap density model including the effect of mobility degradation due to interface traps and velocity saturation is developed to explain the experimental results. The interface trap density is increased with the number of mobile charges driven to the Si-SiO2 interface, whereas the concomitant degradation can be reduced by a suitable negative charge-temperature treatment. © 1986.SEMICONDUCTING SILICON; TRANSISTORS, FIELD EFFECT; CHARGE-TEMPERATURE TECHNIQUE; INTERFACE TRAPS; SEMICONDUCTOR DEVICES, MOSjournal article10.1016/0040-6090(86)90003-92-s2.0-0022775209