Huang, Yu MingYu MingHuangPeng, Chun YenChun YenPengMiao, Wen ChienWen ChienMiaoChiang, HsinHsinChiangLee, Tzu YiTzu YiLeeChang, Yun HanYun HanChangSingh, Konthoujam JamesKonthoujam JamesSinghDaisuke Iida, Z.Z.Daisuke IidaHorng, Ray HuaRay HuaHorngChow, Chi WaiChi WaiChowCHIEN-CHUNG LINOhkawa, KazuhiroKazuhiroOhkawaChen, Shih ChenShih ChenChenKuo, Hao ChungHao ChungKuo2023-06-192023-06-192022-08-0123279125https://scholars.lib.ntu.edu.tw/handle/123456789/632862In this study, we present a high-efficiency InGaN red micro-LED fabricated by the incorporation of superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector, exhibiting maximum external quantum efficiency of 5.02% with a low efficiency droop corresponding to an injection current density of 112 A∕cm2. The fast carrier dynamics in the InGaN is characterized by using time-resolved photoluminescence, which is correlated to a high modulation bandwidth of 271 MHz achieved by a 6× 25-μm-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A∕cm2. It holds great promise for full-color micro-displays as well as high-speed visible light communication applications based on monolithic InGaN micro-LED technologies.EMITTING-DIODES; PERFORMANCE; EMISSIONjournal article10.1364/PRJ.4620502-s2.0-85138332350WOS:000836701400024https://api.elsevier.com/content/abstract/scopus_id/85138332350