2014-01-012024-05-13https://scholars.lib.ntu.edu.tw/handle/123456789/653568摘要：近期為了實現更高速的訊號傳輸，矽基集成光電迴路於近幾年迅速發展，其中矽量子點也被廣泛運用於製備主、被動光電元件。本年度計畫內容主要分為兩個方向。其一為發展矽量子點全光波導調變器，我們欲使用電漿增強型化學氣相沉積法(PECVD)製備出矽量子點鑲嵌於各式各樣的矽化物(例如:氧化矽、氮化矽或是碳化矽)。利用矽量子點內自由載子吸收的特性，我們以紫外光雷射激發矽量子點，以控制波導元件內的自由載子濃度，即控制波導元件內的自由載子吸收係數，來達到對注入訊號光強度的調變。接著，由於矽量子點同時也擁有很強的非線性克爾效應，因此，我們將發展矽量子點之環形調變器，透過一脈衝雷射注入至環腔內，來達到對波導內等效折射率的改變，進而達到對共振波長的調製，最終達到對注入訊號光的調變。 其二之計畫內容為發光二極體、電晶體與波導整合之調變器。發光二極體的部分是利用不同組成比例之碳化矽組成超晶格結構並將每一層都含有其矽量子點當其主要發光層，其好處為有效壓縮線寬，並有可能進一步提升增益。電晶體與波導整合之調變器則是電晶體高速開關切換特性，使其自由載子之切換速度，進一步提升利用自由載子吸收特性之波導性能。 <br> Abstract: To realize the ultra-high speed communication, the silicon based optoelectronics circuits have been wildly developed in recent years. The project will be executed in two parts. The first part of the project is to develop the Si-QD based all-optical modulator. We will fabricate the Si-QD embedded in SiOx, SiNx or SiC by using the plasma enhanced chemical vapor deposition (PECVD). Based on the free-carrier absorption effect in Si-QD, the excited free-carrier density in Si-QD will be controlled by using the pumping laser at wavelength of 405-nm. That is, the free-carrier induced absorption loss can be modified by the power of pumping laser, and the injected probe signal at 1550-nm will be modulated by the pumping laser. Moreover, the Si-QD has the strong optical Kerr nonlinearity due to the strong quantum confinement effect, and we will utilize this property to demonstrate the ring-type optical modulator. By injecting the femtosecond pulse laser into the ring resonator at the resonant peak, the effective refractive index of the waveguide will be modified due to the Kerr effect. Therefore, the resonant peak of the ring waveguide will be changed by the pump laser, and results in the all-optically modulation on the injected probe beam. The second part of the project is to integrate the Si-QD based LEDs, transistors, and waveguides to form the Si-QD based modulators. For LED application, we will use the superlattice structure with different C/Si compositional ratio of SiC films and make the SiC film have the Si-QDs, which acts as the active layer of SiC based LEDs. Its advantage effectively suppresses the linewidth of LEDs. In addition, it could further improve the gain of LEDs. On the other hands, the modulated integrated by the Si-QD based transistors and waveguides could prompt the switching speed of free-carriers because of the high-speed switching characteristics of transistors, which further improve the performance of the free-carrier absorption effect based waveguides.矽量子點全光波導調變器富矽氧化矽/氮化矽/碳化矽發光二極體Si quantum dotsAll-optical waveguide modulatorSi-rich SiOx/SiNx/SixC1-xLight-emitting diodes