Low voltage operation of high-�e HfO<inf>2</inf>/TiO <inf>2</inf>/Al<inf>2</inf>O<inf>3</inf> single quantum well for nanoscale flash memory device applications

Maikap, S.S.MaikapWang, T.-Y.T.-Y.WangTzeng, P.-J.P.-J.TzengLee, H.-Y.H.-Y.LeeLin, C.-H.C.-H.LinWang, C.-C.C.-C.WangLee, L.-S.L.-S.LeeYang, J.-R.J.-R.YangTsai, M.-J.M.-J.TsaiJER-REN YANG2020-05-122020-05-122008https://scholars.lib.ntu.edu.tw/handle/123456789/491621Low voltage operation of high-�e HfO<inf>2</inf>/TiO <inf>2</inf>/Al<inf>2</inf>O<inf>3</inf> single quantum well for nanoscale flash memory device applicationsjournal article10.1143/JJAP.47.18182-s2.0-54249111065https://www.scopus.com/inward/record.uri?eid=2-s2.0-54249111065&doi=10.1143%2fJJAP.47.1818&partnerID=40&md5=a9803411f381df4f09117814167e4557