Dhara S.Datta A.Wu C.T.Lan Z.H.Chen K.H.Wang Y.L.Hsu C.W.Shen C.H.Chen L.C.Chen C.C.LI-CHYONG CHEN2022-08-092022-08-09200400036951https://www.scopus.com/inward/record.uri?eid=2-s2.0-3242740337&doi=10.1063%2f1.1760593&partnerID=40&md5=a17430e0830e897b4377f337bbef55ffhttps://scholars.lib.ntu.edu.tw/handle/123456789/616400Hexagonal-to-cubic phase transformation was carried out in gallium nitride nanowires using gallium ion implantation. The phase transformation was confirmed by performing optical photoluminescence, cathodoluminescence and high-resolution transmission electron microscopy (HRTEM). The deposition of Gallium from the implanted source reduced the surface energy and stablized the cubic phase. It was found that the fluctuations in the short-range order induced by dynamic annealing with the irradiation process stabilize the cubic phase and cause the phase transformation.Annealing;Cathodoluminescence;Crystallography;Epitaxial growth;Gallium nitride;Interfacial energy;Ion beams;Ion implantation;Irradiation;Kinetic theory;Lattice constants;Phonons;Photoluminescence;Positive ions;Substrates;Transmission electron microscopy;Defect annihilation;High resolution transmission electron microscopy (HRTEM);Nanowires;Zinc-blend structure;Phase transitionsjournal article10.1063/1.17605932-s2.0-3242740337