Chiu P.KWang P.YLi S.TChen C.JChen Y.T.CHING-JAN CHEN2021-09-022021-09-022020https://www.scopus.com/inward/record.uri?eid=2-s2.0-85096627328&doi=10.1109%2fECCE44975.2020.9236235&partnerID=40&md5=53b0a52c54c4b26b1e249ee8882593b7https://scholars.lib.ntu.edu.tw/handle/123456789/580751GaN devices operating at reverse conduction region causing excessive conduction loss. Therefore, the GaN based switching converters are required to minimize the dead-time. This paper proposes a novel highly digitally adaptive dead-time control for GaN driver. A driver integrated circuit (IC) is designed in 0.18?m BCD GEN2 process to verify the concept. The measurement result achieves 0.7ns dead-time at 2A and efficiency can improve 2.1% at 2A full load compared to 10ns fixed dead-time counterpart. ? 2020 IEEE.DC-DC converters; Energy conversion; Gallium nitride; III-V semiconductors; Integrated circuits; Rectifying circuits; Timing circuits; Buck converters; Conduction loss; Driver IC; Driver integrated circuits; Full-load; Reverse conduction; Switching converter; Synchronous rectifier; Electric rectifiersconference paper10.1109/ECCE44975.2020.92362352-s2.0-85096627328