Gao, J.-Y.J.-Y.GaoChen, C.-K.C.-K.ChenLin, Y.-C.Y.-C.LinKuo, C.-C.C.-C.KuoWEN-CHANG CHEN2022-03-222022-03-22202114387492https://www.scopus.com/inward/record.uri?eid=2-s2.0-85113297106&doi=10.1002%2fmame.202100512&partnerID=40&md5=c000e0bd6edbefb240cc8f9df18c4fa2https://scholars.lib.ntu.edu.tw/handle/123456789/598273Flexible memory devices are one of the most crucial elements in the wearable electronics. In this work, polyimides (PIs)-based flexible resistive memory devices with an excellent thermal and mechanical durability are demonstrated. Four kinds of functional PIs are derived from the heterocyclic diamines including 2,6-diaminodibenzo-p-dioxin (OODA) and 2,6-diaminothianthrene, and dianhydrides including 4,4′-(hexafluoroisopropylidene)diphthalic anhydride (6FDA) and 3,3′,4,4′-biphenyltetracarboxylic dianhydride. PI with diamine of OODA and dianhydride of 6FDA (PI(OODA_6FDA)) possesses outstanding thermal and mechanical properties with a high glass transition temperature of 352?°C, a low coefficient of thermal expansion of 28.1?ppm K?1, and a high elongation at break of 10%. In addition, PI(OODA_6FDA)-based memory shows write-once-read-many behavior with a high on/off current ratio of 106 and a stable data retention, attributed to the donor–acceptor charge transfer between the polymer chains. The retained current levels at a low resistive state can be observed even with thermal treatment at 200?°C for 24 h or 1000 times cyclic bending at a bending radius of 5?mm. These results demonstrate the potential of heterocyclic PIs for flexible resistive memory. ? 2021 Wiley-VCH GmbHdonor–acceptorflexible electronicspolyimideresistor-type memorywrite-once-read-many (WORM) type memoryAminesAromatic compoundsCharge transferGlass transitionPolyimidesThermal expansionHexafluoroisopropylideneHigh-glass transition temperaturesLow coefficient of thermal expansionsMechanical durabilityON/OFF current ratioResistive memoryThermal and mechanical propertiesWrite-once-read-manyFlexible electronicsHighly Thermal Stable Polyimides Applied in Flexible Resistive Memoryjournal article10.1002/mame.2021005122-s2.0-85113297106