Cheng H.-C.Hong W.-K.Tarntair F.-G.Chen K.-J.Lin J.-B.Chen K.-H.Chen L.-C.LI-CHYONG CHEN2022-08-092022-08-09200110990062https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035323474&doi=10.1149%2f1.1354497&partnerID=40&md5=afa09038854328b30cbd33826e823c54https://scholars.lib.ntu.edu.tw/handle/123456789/616421A new field emission device composed of carbon nanotubes and a thin film transistor (TFT) has been successfully demonstrated to significantly improve emission stability. Carbon nanotubes are directly integrated in the drain region of the TFT and the emission current from the carbon nanotubes is controlled via the TFT drain current. The fluctuation of the emission current of the TFT-controlled carbon nanotubes can be suppressed to less than 2%, below the fluctuation of uncontrolled carbon nanotubes. The novel field emission device exhibits low-voltage controllability, good emission stability, and structural simplicity, making it promising for application to future field-emission display.Anodes;Carbon nanotubes;Electric fields;Electric potential;Electron emission;Leakage currents;Scanning electron microscopy;Semiconductor device manufacture;Silica;Stability;Synthesis (chemical);Thin film transistors;Emission current;Field emission devices;Gate voltage;Field emission displaysjournal article10.1149/1.13544972-s2.0-0035323474