Delayed-turn-on phenomenon in accumulation-type SOI pMOS device operating at liquid nitrogen temperature

Dept. of Electr. Eng., National Taiwan Univ.Kuo, J.B.J.B.KuoSim, J.H.J.H.SimKuoJB2007-04-192018-07-062007-04-192018-07-061992-10N/Ahttp://ntur.lib.ntu.edu.tw//handle/246246/2007041910042634application/pdf217190 bytesapplication/pdfen-USDelayed-turn-on phenomenon in accumulation-type SOI pMOS device operating at liquid nitrogen temperaturejournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910042634/1/00170875.pdf