指導教授：王暉臺灣大學：電信工程學研究所姜博瀚Chiang, Po-HanPo-HanChiang2014-11-302018-07-052014-11-302018-07-052014http://ntur.lib.ntu.edu.tw//handle/246246/264273本論文可以分成兩個部分：功率放大器及壓控振盪器。 首先是使用台積電65奈米金氧半場效電晶體製作50至90 GHz的功率放大器。此放大器利用級間匹配網路並且串接五級共源極的架構達到覆蓋V-band和E-band的頻率，並且在輸出端並聯四顆電晶體得到大功率的輸出。此功率放大器的增益為30.6 dB且3-dB頻寬為53至84 GHz、最大輸出功率為10.8 dBm及增益壓縮1dB時的輸出功率為7.2 dBm 第二部分，使用台積電65奈米金氧半場效電晶體設計出220GHz壓控振盪器。此壓控振盪器之架構為調控基體的偏壓以改變電晶體之寄生電容值，達到調控壓控振盪器的振盪範圍。偏壓為1.2 V時，此電路之量測結果為：可調頻率範圍從206 至 220GHz、輸出訊號功率為-1.6 dBm及直流功耗為43.2 mW。晶片面積為 0.25 mm 0.25 mm、直流轉換效率為 1.6%及單位面積功率為 11.1 mW/mm2。此壓控振盪器是以金氧半場效電晶體製作中效率及單位面積功率最大者。This thesis is divided into two parts, one is a power amplifier and the other one is a voltage control oscillator (VCO). At the first, a 50 to 90 GHz power amplifier is realized in TSMC 65-nm CMOS process. The power amplifier utilizes the inter-stage matching network and the five-stage common source to cover full V-band and E-band frequency. In order to get high output power, the output port of the power amplifier combines four transistors. The PA exhibits a small signal gain from 53 to 84 GHz (3-dB bandwidth of 31 GHz), and 10.8 dBm Psat, and 7.2 dBm P1dB with a dc power of 123 mW with the drain voltage of 1.2 V. Secondly, a 220 GHz VCO is realized in TSMC 65 nm CMOS technology. The VCO utilizes the body bias to control the parasitic capacitor of the transistors, and the VCO achieves high output power and wide tuning range simultaneously. Under supply voltage 1.2 V, the tuning range of the VCO is 206 to 220 GHz; the output power is -1.6 dBm; the dc power is 43.2 mW; and the chip size is 0.062 mm2. Compared with the published works, this VCO exhibits the highest dc to RF conversion efficiency and power area density using CMOS technologies.誌謝 i 中文摘要 ii ABSTRACT iii CONTENTS iv LIST OF FIGURES vi LIST OF TABLES xi Chapter 1 Introduction 1 1.1 Background and Motivation 1 1.2 Literature Survey 3 1.2.1 V-band and E-band Power Amplifier 3 1.2.2 G-Band VCO 5 1.3 Contributions 7 1.4 Thesis Organization 8 Chapter 2 Design of a V-band and E-band power amplifier in TSMC 65-nm CMOS Process 9 2.1 Broadband Amplifier Design 9 2.1.1 Compensated Matching Networ 9 2.2 Circuit Desigs 10 2.3 Chip Layout and Simulation Results 15 2.4 Stability Consideration 18 2.5 Experimental Results 22 2.6 Discussion 31 2.7 Summary 33 Chapter 3 220 GHz Body Bias Control Oscillator with High Output Power and Wide Tuning Rang 35 3.1 LC VCO Basics 35 3.1.1 Analysis of Oscillators 35 3.1.2 LC VCO Model 38 3.1.3 Cross-Coupled LC VCO 40 3.1.4 Push-Push VCO 43 3.2 220GHz Body Bias Control Oscillator using 65nm CMOS process 44 3.2.1 The Variable Capacitor of the Varactor-Free Oscillator 44 3.2.2 The Parasitic Capacitor of Transistors 45 3.2.3 Extract Parasitic Capacitor of Transistors 51 3.2.4 The Inductor of of the Varactor-Free Oscillator 58 3.2.5 Circuits Design 59 3.3 Experiment Results 64 3.4 Discussion 70 3.5 Summary 70 Chapter 4 Summary 73 References 744385827 bytesapplication/pdf論文使用權限：不同意授權毫米波場效電晶體功率放大器壓控振盪器thesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/264273/1/ntu-103-R00942086-1.pdf