Huang, Bo WeiBo WeiHuangFu, Zi HaoZi HaoFuKUN-YOU LIN2023-08-012023-08-012022-01-019784902339567https://scholars.lib.ntu.edu.tw/handle/123456789/634340This paper presents a 28/38 GHz dual-band and dual-mode power amplifier (PA) fabricated in a 90-nm CMOS process. With the proposed constant optimal load impedance (Zopt) method, this dual-mode PA can achieve the optimal power performance of both modes using the same matching circuit and improve the linear output power in low-power (LP) mode. In the high-power (HP) mode, the proposed PA demonstrates 23.1/16 dB small-signal gain, 18.4/17.5 dBm saturated output power (Psat), 24.6/22.1% peak power-added efficiency (PAEmax), 18.1/16.5 dBm output P1dB(OP1dB) and 24.4/20.4% corresponding PAE (PAE1dB) at 28/38 GHz. In the LP mode, the proposed PA achieves 20.4/10.7 dB small-signal gain, 12.9/12.4 dBm Psat 12.4/9% PAEmax, 12.5/11.9 dBm OP1dB, 12.2/8.7% PAE1dB at 28/38 GHz.CMOS | dual power modes | millimeter-wave | power amplifier (PA)conference paper2-s2.0-85146695821https://api.elsevier.com/content/abstract/scopus_id/85146695821