Stacked Two Ge0.98Si0.02 Nanowire nFETs with High-κ Dielectrics Featuring High ION per Footprint of 4800 μA/μm at VOV=VDS=0.5V

Chen, Yu RuiYu RuiChenTu, Chien TeChien TeTuZhao, ZefuZefuZhaoLiu, Yi ChunYi ChunLiuHuang, Bo WeiBo WeiHuangXing, YifanYifanXingChen, Guan HuaGuan HuaChenCHEE-WEE LIU2023-08-212023-08-212023-01-019798350334166https://scholars.lib.ntu.edu.tw/handle/123456789/634634The peak dielectric constant of 47 is obtained with Hf0.2Zr0.8O2. The Hf0.2Zr0.8O2 is used in the gate stack on the high mobility Ge0.98Si0.02 channel to significantly enhance the drive current by taking advantage of the high dielectric constant. The stacked two Ge0.98Si0.02 gate-all-around nanowires can have high ION per footprint of 4800 μ A μ m at VOV= VDS=0.5 V. The thermal budget is as low as 450 °C.Stacked Two Ge0.98Si0.02 Nanowire nFETs with High-κ Dielectrics Featuring High ION per Footprint of 4800 μA/μm at VOV=VDS=0.5Vconference paper10.1109/VLSI-TSA/VLSI-DAT57221.2023.101343042-s2.0-85163046638https://api.elsevier.com/content/abstract/scopus_id/85163046638