Erratum to "Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs"

Liao, M.-H.M.-H.LiaoChen, C.H.C.H.ChenChang, L.C.L.C.ChangYang, C.C.YangMING-HAN LIAO2020-01-132020-01-132015https://scholars.lib.ntu.edu.tw/handle/123456789/447958Erratum to "Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs"other10.1109/TED.2015.24053342-s2.0-85028167275https://www.scopus.com/inward/record.uri?eid=2-s2.0-85028167275&doi=10.1109%2fTED.2015.2405334&partnerID=40&md5=164034559fa8e2f73f89391d52ce7842