Low temperature (<400 °c) Al2O3 ultrathin gate dielectrics prepared by shadow evaporation of aluminum followed by nitric acid oxidation

JENN-GWO HWU2018-09-102018-09-102007http://www.scopus.com/inward/record.url?eid=2-s2.0-33947100102&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/329945Low temperature (<400 °c) Al2O3 ultrathin gate dielectrics prepared by shadow evaporation of aluminum followed by nitric acid oxidationjournal article10.1063/1.2711290