Lin, Ching-FuhChing-FuhLinPiprek, JoachimJoachimPiprekSu, Yi-ShinYi-ShinSuChu, Fei-HungFei-HungChuTsai, Chia-WeiChia-WeiTsai2009-03-182018-07-062009-03-182018-07-0620030277786Xhttp://ntur.lib.ntu.edu.tw//handle/246246/145938http://ntur.lib.ntu.edu.tw/bitstream/246246/145938/1/47.pdfhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-1842581795&doi=10.1117%2f12.512588&partnerID=40&md5=cac3386cbdd29109f93a6d92e9b24d32Nonidentical multiple quantum wells (MQWs) had been widely used for broadening the emission or gain bandwidth of semiconductor optical amplifiers (SOAs). However, the carrier distribution among the MQWs is not uniform, leading to nonuniform gain contributed from different QWs. Thus using nonidentical MQWs for broadband purpose is not intuitively straightforward. Several factors need to be carefully considered. Those factors include the QW sequence, electron/hole transport time across the separate confinement hetero-structure, as well as carrier capture time. In this work, we will discuss the design of MQWs for broadband SOAs. With properly designed nonidentical MQWs, the emission bandwidth could be nearly 400 nm. Also, the tuning range of semiconductor lasers could be extended to be over 200 nm.application/pdf250434 bytesapplication/pdfen-USBroadband; Carrier distribution; Emission bandwidth; Nonidentical multiple quantum wells; Quantum-well sequence; Semiconductor optical amplifiers; Separate confinement hetero-structureBandwidth; Broadband amplifiers; Electromagnetic wave emission; Electron transport properties; Heterojunctions; Optical communication; Semiconductor lasers; Semiconductor quantum wells; Spectroscopy; Tomography; Carrier distribution; Emission bandwidth; Nonidentical multiple quantum wells; Quantum well-sequence; Semiconductor optical amplifiers; Separate confinement hetero-structure; Light amplifiersconference paper2-s2.0-1842581795http://ntur.lib.ntu.edu.tw/bitstream/246246/145938/1/47.pdf