As+-implanted AlGaAs oxide-confined VCSEL with enhanced oxidation rate and high performance uniformity

Laih, L.-H.L.-H.LaihKuo, H.C.H.C.KuoLin, G.-R.G.-R.LinLaih, L.-W.L.-W.LaihWang, S.C.S.C.WangGONG-RU LIN2018-09-102018-09-102004http://www.scopus.com/inward/record.url?eid=2-s2.0-2942739431&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/309197As+-implanted AlGaAs oxide-confined VCSEL with enhanced oxidation rate and high performance uniformityjournal article10.1109/LPT.2004.827116