Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al 2O 3 (0001) by high power impulse magnetron sputtering

Junaid, M.M.JunaidLundin, D.D.LundinPalisaitis, J.J.PalisaitisHsiao, C.-L.C.-L.HsiaoDarakchieva, V.V.DarakchievaJensen, J.J.JensenPersson, P.O.Å.P.O.Å.PerssonSandström, P.P.SandströmLai, W.-J.W.-J.LaiChen, L.-C.L.-C.ChenChen, K.-H.K.-H.ChenHelmersson, U.U.HelmerssonHultman, L.L.HultmanBirch, J.J.Birch2020-06-182020-06-18201100218979https://scholars.lib.ntu.edu.tw/handle/123456789/503289Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al 2O 3 (0001) by high power impulse magnetron sputteringjournal article10.1063/1.3671560